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Semiconductors

Science & Math

Ferry, David K.

Technology

Macmillan Pub. Co.

Engineering & Transportation

Engineering

Prentice-Hall a Pearson Education Company

This book provides the knowledge and understanding necessary to comprehend the operation of individual electronic devices that are found in modern micro-electronics. As a textbook, it is aimed at the third-year undergraduate curriculum in electrical engineering, in which the physical electronic properties are used to develop an introductory understanding to the semiconductor devices used in modern micro-electronics. The emphasis of the book is on providing detailed physical insight into the microscopic mechanisms that form the cornerstone for these technologies. Mathematical treatments are therefore kept to the minimum level necessary to achieve suitable rigor.

Electronic Materials and Devices

Bird, Jonathan

Academic Press

Ultra Large Scale Integrated Microelectronics (Prentice Hall Advanced Reference Series)

Greeneich, Edwin W.

Akers, Lex A.

PRENTICE/HALL

The Physics of Submicron Semiconductor Devices: (Closed)) (NATO Science Series B:)

The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

The Physics of Submicron Semiconductor Devices (NATO Science Series B:, 180)

Grubin, Harold L.

Jacoboni, C.

Physics

Springer

A compendium of otherwise scattered information on the physics involved in the construction and operation of semiconductor devices at the submicron level. Addressed to people who make such devices, and assumes a solid understanding of solid state physics and electronics, and at least a familiarity w

Physics of Submicron Devices (Microdevices)

Grondin, Robert O.

Chemistry

Transport in Nanostructures

Goodnick, Stephen M.

Cambridge University Press

The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behavior. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.

This textbook for graduate physicists and engineers provides a sorely needed, single source approach to QM. Topics have been specifically chosen for their relevance to today's electronics. Elements normally left until the end of a traditional QM course (or omitted) are put into a logical order for this group of scientists.Topics draw upon an impressively wide array of recent experimental research into heteroepitaxial growth, quantum wells and superlattice structure amongst other topics. The text is well illustrated and carefully written by an internationally known and experienced author. It is based upon a respected course of many years' standing and is enhanced by a set of problems designed to test the student's theoretical knowledge.The straighforward way in which the author introduces and then develops topics makes this an ideal text for those going on to deal with semiconductors and laser topics in their subsequent careers.Requires background knowledge of linear vector spaces, electromagnetic field theory and and introductory course in semiconductor materials.

Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers,

CRC-Press

As we settle into this second decade of the 21st century it is evident that the advances in microelectronics have truly revolutionized our day-to-day lifestyle. The growth of microelectronics itself has been driven, and in turn is calibrated by, the growth in density of transistors on a single integrated circuit, a growth that has come to be known as Moore's Law. Considering that the first transistor appeared only at the middle of the last century, it is remarkable that billions of transistors can now appear on a single chip. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one-semester course for graduate students, provides a thorough understanding of the key solid-state physics of semiconductors and prepares readers for further advanced study, research and development work in semiconductor materials and applications. The book describes how quantum mechanics gives semiconductors unique properties that enabled the microelectronics revolution, and sustain the ever-growing importance of this revolution. Including chapters on electronic structure, lattice dynamics, electron-phonon interactions and carrier transport it also discusses theoretical methods for computation of band structure, phonon spectra, the electron-phonon interaction and transport of carriers.

Semiconductors: Bonds and bands (IOP Expanding Physics)

IOP Publishing Ltd.

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